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NDF05N50Z, NDD05N50Z
N-Channel Power MOSFET
500 V, 1.5 W
Features
? Low ON Resistance
? Low Gate Charge
? ESD Diode ? Protected Gate
? 100% Avalanche Tested
? 100% Rg Tested
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS ( T C = 25 ° C unless otherwise noted)
Rating Symbol NDF NDD Unit
V DSS
500 V
http://onsemi.com
R DS(on) (MAX) @ 2.2 A
1.5 W
N ? Channel
D (2)
Drain ? to ? Source Voltage
V DSS
500
V
Continuous Drain Current R q JC
I D
5.5
(Note 1)
4.7
A
Continuous Drain Current
R q JC , T A = 100 ° C
Pulsed Drain Current, V GS @ 10 V
Power Dissipation R q JC
Gate ? to ? Source Voltage
Single Pulse Avalanche Energy, I D =
5.0 A
ESD (HBM) (JESD22 ? A114)
RMS Isolation Voltage (t = 0.3 sec.,
R.H. ≤ 30%, T A = 25 ° C) (Figure 17)
Peak Diode Recovery (Note 2)
I D
I DM
P D
V GS
E AS
V esd
V ISO
dV/dt
3.5
(Note 1)
20
30
± 30
130
3000
4500
4.5
3
19
83
A
A
W
V
mJ
V
V
V/ns
G (1)
S (3)
3
3
MOSFET dV/dt
Continuous Source Current
(Body Diode)
Maximum Temperature for Soldering
Leads
Operating Junction and
Storage Temperature Range
dV/dt
I S
T L
T J , T stg
60
5
260
? 55 to 150
V/ns
A
° C
° C
1
2
NDF05N50ZG
TO ? 220FP
CASE 221D
4
1
2
NDF05N50ZH
TO ? 220FP
CASE 221AH
3
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I S = 4.4 A, di/dt ≤ 100 A/ m s, V DD ≤ BV DSS , T J = +150 ° C
1
2
NDD05N50Z ? 1G
IPAK
CASE 369D
4
1 2
3
NDD05N50ZT4G
DPAK
CASE 369AA
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 7 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
June, 2013 ? Rev. 7
1
Publication Order Number:
NDF05N50Z/D
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